By Siegfried Selberherr

Numerical research and simulation has develop into a simple method in machine study and improvement. This booklet satisfies the call for for an intensive overview and judgement of many of the actual and mathematical versions that are in use allover the area at the present time. A compact and demanding reference with many citations is supplied, that's fairly suitable to authors of gadget simulation courses. a truly distinct therapy of the state of the art and hugely really good numerical tools for machine simulation serves in an hierarchical demeanour either as an creation for beginners and a important reference for the skilled reader.

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The Shockley-Like Equations for the Carrier Densities and the Current Flows in Materials with a Nonuniform Composition. Solid-State Electron. 23,49-53 (1980). 92] Wieder, A. : Emitter Effects in Shallow Bipolar Devices: Measurements and Consequences. IEEE Trans.

Swanson, R. : Photovoltaic Measurement of BMIdgap Narrowing in Moderately Doped Silicon. Solid-State Electron. 5, 483 -489 (1983). 26] Dhariwal, S. , Ojha, V. : Band Gap Narrowing in Heavily Doped Silicon. Solid-State Electron. 9, 909-911 (1982). 27] Dorkel, J. : On Electrical Transport in Non-Isothermal Semiconductors. Solid-State Electron. 8, 819-821 (1983). 28] Engl, W. , Dirks, H. : Device Modeling. Proc. 1, 10-33 (1983). : Transport Physics for VLSI. In: Introduction to the Numerical Analysis of Semiconductor Devices and Integrated Circuits, pp.

IEEE Trans. 8, 920-927 (1983). 12] Blakemore, J. : Approximations for Fermi-Dirac Integrals, especially the Function F 1/2(x} Used to Describe Electron Density in a Semiconductor. Solid-State Electron. 25, No. 11, 1067 -1076 (1982). 13] Blatt, F. : Physics of Electronic Conduction in Solids. New York: McGraw-Hill 1968. : Transport Equations for Electrons in Two-Valley Semiconductors. IEEE Trans. 1, 38 -47 (1970). 15] Bonch-Bruevich, V. L. : On the Theory of Heavily Doped Semiconductors. Soviet Physics Solid State 4, No.

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